经销siemens存储卡6GK5907-8PA00西门子
功能:
Flash memory
The durability of the flash memory is defined by the number of P/E cycles (program/erase or read/write cycles) which a cell can withstand during its lifetime.
It is measured in TBW (terabytes written), and varies by factors other than just the type of flash used.
The use and durability of suitable memories is affected by important factors, such as:
Costs
Firmware controller used
Environment
Working temperature
Acceptance of voltage supply deviations
可用于下列产品
产品 1 6AV3688-3AA03-0AX0
产品 2 6AV3688-3CD13-0AX0
产品 3 6AV3688-4CX02-0AA0
产品 4 6AV3688-3ED13-0AX0
产品 5 6AV3688-4EY06-0AA0
产品 6 6AV3688-4CX07-0AA0
产品 7 6AV3688-4EY07-0AA0
经销siemens存储卡6GK5907-8PA00西门子
一般信息 | ||
产品类型标志 | 按钮式面板的存储器模块 | |
电源电压 | ||
电源的电压类型 | DC | |
存储器 | ||
存储器类型 | 保留存储模块 | |
写保护开关 | 否 | |
标准、许可、证书 | ||
CE 标记 | 是 | |
环境要求 | ||
运行中的环境温度 | ||
| 0 °C | |
| 55 °C | |
