他们之前都可以测距测高测量角度，价格镭创这个*高，价位在3元左右，图柏斯价格从35-155左右。奥卡价格在3-5区间。欧尼卡激光测距仪以1-3区间为主。激光测距仪什么牌子好测量物体之间的距离是我们生活中常遇到的事情，尤其是装修新家的时候，对数据的准确度要求就更高了，常见的皮尺、卷尺之类的测量工具，在使用的便捷程度和准确度上都有所欠缺，所以作为一个有着2年经验的装修老师傅，我在了解了激光测距仪这个更加高级的测量工具之后，从那以后我的测量工具都变成了激光测距仪。
PV023R1K1T1NHCC
PV023R1K1T1VMMC
PV023R1K1T1WMRC
PV023R9K1T1NFWS
PV023R1K1JHNMMC
PV023R1K4T1NFHS
PV023R1L1T1NMMC
PV023R1K8T1VMMC
PV023R1K1T1NFRZ
PV023R9K1T1NMMC
PV023R1K4T1NMR1
PV023R1K1T1VFDS
PV023R1K8T1NMMC
PV023R1K8T1NFWS
PV023R1K1T1WMR1
PV023R1K8T1N001
PV023L1K1T1NMMC
PV023R1K4T1NMMC
PV023R1K1T1NKLC
PV023R1K4T1NFR1
PV023R1K1S1NFWS
PV023R1K1T1NFFC
PV023L1K1T1NFWS
PV023R1K1T1WFDS
PV023R1K1T1NFFP
PV023R1L1T1NF
PV023R1K1T1WMM1
PV023R1K1T1NHLC
PV023R1K1T1NMRZ
PV023R1K1T1NMRK
PV023R1K1T1WMMC
PV023R1K1T1NFF1
PV028R1K1T1N001
PV028R1K1T1N100
PV028R1K1T1NFDS
PV028R1K1T1NFR1
PV028R1K1T1NFHS
PV028R1K1T1NMMC
PV028R1K1T1NMM1
PV028R1K1T1NMRC
PV028R1K1T1NFWS
PV028R1K1T1NFRC
PV028R1K1T1NFF1
PV028R1K1T1WMM1
PV028R1K1T1WFR1
PV028R1K8T1NFWS
PV028R1K4T1NFR1
PV028R1K1T1VMMC
PV028R1K1T1NHCC
PV028R1K4T1NMMC
PV028R1K1T1NELC
PV028R1K1T1NHLC
PV028R1K8T1N001
PV028R1K1T1NF
PV028R9K1T1NFWS
PV028R9K1T1NMMC
PV028R1K1T1VFDS
PV028R1K1AYNMRZ
PV028R1K8T1NMMC
PV028R1K1T1NMRK
PV028R1K1T1NFFP
PV028L1K1T1NMMC
PV028R1K1T1NFRZ
PV028R1K1S1NFWS
PV028R1K1T1NMMZ
PV028R1K1T1NMR1
PV028R1K1T1NMFC
PV028R1K1T1WFDS
PV028L1K1T1NFWS
PV028R1K1JHNMMC
PV028R1K1T1NMRZ
PV028R1K4T1NFHS
PV028R1K1T1NMF1
PV028R1K1T1NGLC
PV028R1K1T1WMRC
PV028R1L1T1NMMC
PV028R1K1T1WMMC
PV028R1K1T1WMR1
PV028R1K8T1VMMC
PV028R1K1T1NFFC
PV028R1K1T1NMMK
PV028R1K4T1NMR1
PV032R1K1T1N001
PV032R1K1T1N100
PV032R1K1T1NFDS
PV032R1K1T1NFR1
PV032R1K1T1NFHS
PV032R1K1T1NMMC
PV032R1K1T1NMM1
PV032R1K1T1NMRC
PV032R1K1T1NFWS
PV032R1K1T1NFRC
PV032R1K1T1NFF1
PV032R1K1AYNMTZ
PV032R1K1T1NMFC
PV032R1K1T1NMR1
PV032R1K1T1NMF1
PV032R1K1T1NMRK
PV032R1K1T1NFFP
PV032R1K1T1WMMC
PV032R1K4T1NMMC
PV032R1K8T1VMMC
PV032R1K1T1WFR1
PV032R1K1T1NFFC
PV032R1K1JHNMMC
PV032R1K1T1WMRC
PV032R9K1T1NFWS
PID（PotentianInducedDegradation）是一种电势诱导衰减现象，是指组件长期在高电压下使得玻璃，封装材料之间存在漏电流，大量电荷聚集在电池表面。使得电池表面的钝化效果恶化，导致填充因子（FF），短路电流（Isc），开路电压（Voc）降低，使得组件的性能低于设计标准，发电能力也随之下降。2010年，NREL和Solon证实了无论组件采取何种技术的P型晶硅电池，组件在负偏压下都有PID的风险。
