OSI意为开放式系统互联。标准化组织（ISO）制定了OSI模型，该模型定义了不同计算机互联的标准，是设计和描述计算机网络通信的基本框架。OSI模型把网络通信的工作分为7层，分别是物理层、数据链路层、网络层、传输层、会话层、表示层和应用层。从OSI的7层网络模型的角度来看同，CAN现场总线仅仅定义了第1层（物理层，见ISO11898-2标准）、第2层（数据链路层，见ISO11898-1标准）；而在实际设计中，这两层完全由硬件实现，设计人员无需再为此开发相关软件（Software）或固件（Firmware），只要了解如何调用相关的接口和寄存器，即可完成对CAN的控制。
PV032R1K1T1NGLC
PV032R1K4T1NFHS
PV032R1K8S1NFWS
PV032R1K8T1NMMC
PV032R1K1T1WFDS
PV032R1K1AYNMTP
PV032R1K1T1NHCC
PV032R1K1T1WMM1
PV032R1K1AYNMRZ
PV032R1K8T1NFWS
PV032R1K1A4NFTZ
PV032R1K1T1VMMC
PV032R1K1T1NFPV
PV032R1K1A1VFDS
PV032L1E3C1NFWS
PV032R1K1T1NELB
PV032L1K1T1NFWS
PV032R1K1B1NFDS
PV032RAK1T1NF
PV032R1L1B1NFWS
PV032R1K1T1NFPG
PV032R1K1S1NFWS
PV032L1K1T1NMMC
PV032R1K1T1NMRZ
PV032R1K1T1VFDS
PV032R1K1T1N10045
PV032R1K1AYNMT1
PV032R1K8T1N001
PV032R1K1T1NHLC
PV032R1K4T1NFR1
PV032R9K1T1NMMC
PV032R1K1A4VFRZ
PV032R1K1T1NFRZ
PV032R1K1T1NMMK
PV032R1L1T1NMMC
PV032R1K4T1NMR1
PV032R1K1T1WMR1
PV032R9K1T1NMMCK
PV032R1K1T1NE1B
PV032R1K1T1NKLC
PV040R1K8T1NMMC
PV040L1K1T1NFWS
PV040R1K1T1NFRC
PV040R1K1T1NFFP
PV040R1K4T1NMR1
PV040R1K1T1NMR1
PV040R1K1T1NFR1
PV040R1K4T1NMMC
PV040R1K1T1NFDS
PV040R1K1T1NFF1
PV040R1K1T1NMRZ
PV040R1K1AYNMRZ
PV040R1K4T1NFHS
PV040R1K1T1WFDS
PV040R1K8T1VMMC
PV040R1K8T1N001
PV040R9K1T1NMMC
PV040R1K4T1NFR1
PV040R1K1T1N001
PV040R1K8T1NFWS
PV040R1K1T1VFDS
PV040R1K1A4NFRZ
PV040R1K1T1NMRC
PV040R1K1T1NMM1
PV040R1K1T1WMM1
PV040R1K1T1NMRK
PV040R1K1T1NHCC
PV040R1K1T1NMF1
PV040R1K1JHNMMC
PV040L1K1T1NMMC
PV040R1K1S1NFWS
PV040R1L1T1NMMC
PV040R1D8T1N001
PV040R1K1T1NMFC
电子器械产品是与生命密切相关的特殊产品，其人机界面设计比其它工业产品设计更具有特殊性，应该始终以人为中心进行设计。其人机界面设计主要考虑显示与控制部分是否合理，能否会产生误操作，操作是否方便易行，产品作用于时是否满足作用部分的生理需求等。病房显示界面及其辅助器械的交互界面由于使用的处理器处理能力较低，设计理念比较滞后，导致使用者在使用屏幕进行交互操作时有一种迟滞的感觉，并且整体界面设计给人的感受比较呆板。
PV040R1K1T1NFWS
PV040R1K1T1WFR1
PV040R1K1T1NKLC
PV040R9K1T1NFWS
PV040R1K1T1NFFC
PV040R1K1T1NF
PV040R1K1T1N100
PV040R1K1T1WMR1
PV040R1K1T1NFRZ
PV040R1K1T1WMRC
PV040R1K1T1NMMK
PV040R1K1T1NMMC
PV040R1K1T1VMMC
PV040R1K1T1NFHS
PV040R1K1T1NGLC
PV040R1K1T1NHLC
PV040R1K1T1WMMC
PV040L1L1T1NFWS
PV040R1K1T1NMLC
PV040R1D1T1NGCC
PV040R1K1T1NELA
PV040R9K1T1NMMCK0188
PV046R1K1T1N001
PV046R1K1T1N100
PV046R1K1T1NFDS
PV046R1K1T1NFR1
PV046R1K1T1NFHS
PV046R1K1T1NMMC
PV046R1K1T1NMM1
PV046R1K1T1NMRC
PV046R1K1T1NFWS
PV046R1K1T1NFRC
PV046R1K1T1NFF1
PV046R1D1T1NFWS
PV046R1D3T1NFFC
PV046R1K1A1NF
PV046L1K1A1NFHS
PV046R1K1B1NFDS
PV046R1D1T1NHCC
PV046R1K1T1NFFC
PV046R1K1T1NMFC
PV046R1K1T1NMF1
PV046R9K1T1NMMC
PV046R1K1AYNMRC
PV046R1K1JHNMMC
PV046R9K1T1NFWS
PV046R1K4T1NMR1
PV046R1K4T1NFHS
PV046L1K1T1NFWS
PV046R1K1S1NFWS
PV046R1K1T1WFDS
PV046R1K1T1NMRZ
PV046R1K1T1EMMC
PV046R1K1T1WMMC
PV046R1K1T1NFFP
PV046R1K1A4NFRC
PV046R1K1T1VFDS
PV046R1K8T1NFWS
PV046R1K1T1WMM1
PV046L1K1T1NMMC
PV046R1K8T1VMMC
PV046R1K8T1NMMC
PV046R1K1T1NF
PV046R1K1AYNMRZ
PV046R1K1T1NHLC
PV046R1K1T1NMMK
PV046R1K1T1NKLC
PV046R1K1T1NMR1
PV046R1K1T1NFRZ
PV046R1K1T1WFR1
PV046R1K4T1NFR1
PV046R1K1T1WMR1
PV046R1K1T1NMRK
PV046R1K1T1WMRC
PV046R1K1T1NHCC
PV046R1K1T1VMMC
PV046R1K1T1NGLC
PV046R1L1T1NMMC
PV046R1K8T1N001
PV046R1K4T1NMMC
PV046R1K1T1NMMCX5934
PV063R1K1T1NMF1
PV063R1K1T1NMMC
PV063R1K1T1NMMK
PV063R9L1TNMPCK0
PV063R1K1A1VFPR
PV063R1K1C1NFWS
PV063R2K1T1N001
PV063R9L1T1NFWS
PV063R1K1A1NFHS
PV063R1K1T1NFFP
PV063R1K1T1NFPR
PV063R1K1T1NGLC
PV063R1K1T1N001
PV063R1K1T1N100
PV063R1K1T1NFDS
基于电学法的热瞬态测试技术1.测试方法：电学法寻找器件内部具有温度敏感特性的电学参数，通过测量该温度敏感参数（TSP）的变化来得到结温的变化。TSP的选择：一般选取器件内PN结的正向结电压。测试技术：热瞬态测试当器件的功率发生变化时，器件的结温会从一个热稳定状态变到另一个稳定状态，T3Ster将会记录结温瞬态变化过程（包括升温过程与降温过程）。一次测试，既可以得到稳态的结温热阻数据，也可以得到结温随着时间的瞬态变化曲线。
