根据这四个典型的谐波波形可以知道:在嵌入式系统实验室中,三相的电流波形为整流电路特征,电容充电过程才有电流,有明显的畸变。通过FFT可以看出3次、5次和7次谐波的THDi含量都很高。其中3次谐波畸变率78%,5次为49%,7次为28%,谐波畸变率高达95.6%,但实验室消耗的功率较低,的B相电流为16A,考虑到建筑的供电变压器容量较大,系统阻抗较小,所以电压畸变率较低,并未过标准限值。另一个需要注意的现象是中性线电流,当仅存在基波电流时,在中性线上会流过三相不平衡电流,各相基波电流相互抵消后的数值肯定小于相的单相基波电流。

PV032R1K1T1NGLC
PV032R1K4T1NFHS
PV032R1K8S1NFWS
PV032R1K8T1NMMC
PV032R1K1T1WFDS
PV032R1K1AYNMTP
PV032R1K1T1NHCC
PV032R1K1T1WMM1
PV032R1K1AYNMRZ
PV032R1K8T1NFWS
PV032R1K1A4NFTZ
PV032R1K1T1VMMC
PV032R1K1T1NFPV
PV032R1K1A1VFDS
PV032L1E3C1NFWS
PV032R1K1T1NELB
PV032L1K1T1NFWS
PV032R1K1B1NFDS
PV032RAK1T1NF
PV032R1L1B1NFWS
PV032R1K1T1NFPG
PV032R1K1S1NFWS
PV032L1K1T1NMMC
PV032R1K1T1NMRZ
PV032R1K1T1VFDS
PV032R1K1T1N10045
PV032R1K1AYNMT1
PV032R1K8T1N001
PV032R1K1T1NHLC
PV032R1K4T1NFR1
PV032R9K1T1NMMC
PV032R1K1A4VFRZ

PV032R1K1T1NFRZ
PV032R1K1T1NMMK
PV032R1L1T1NMMC
PV032R1K4T1NMR1
PV032R1K1T1WMR1
PV032R9K1T1NMMCK
PV032R1K1T1NE1B
PV032R1K1T1NKLC
PV040R1K8T1NMMC
PV040L1K1T1NFWS
PV040R1K1T1NFRC
PV040R1K1T1NFFP
PV040R1K4T1NMR1
PV040R1K1T1NMR1
PV040R1K1T1NFR1
PV040R1K4T1NMMC
PV040R1K1T1NFDS
PV040R1K1T1NFF1
PV040R1K1T1NMRZ
PV040R1K1AYNMRZ
PV040R1K4T1NFHS
PV040R1K1T1WFDS
PV040R1K8T1VMMC
PV040R1K8T1N001
PV040R9K1T1NMMC
PV040R1K4T1NFR1
PV040R1K1T1N001
PV040R1K8T1NFWS
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PV040R1K1A4NFRZ
PV040R1K1T1NMRC
PV040R1K1T1NMM1
PV040R1K1T1WMM1
PV040R1K1T1NMRK
PV040R1K1T1NHCC
PV040R1K1T1NMF1
PV040R1K1JHNMMC
PV040L1K1T1NMMC
PV040R1K1S1NFWS
PV040R1L1T1NMMC
PV040R1D8T1N001
PV040R1K1T1NMFC
你有没有出现过因为编程器问题造成产线停工的情况?为什么会烧录不良甚至故障导致产线停滞?究竟是因为没有区分研发型和量产型还是因为编程器本身电源过流保护、过压保护等设计的不完善?我们一起来看看。编程器又称烧录器、写码器,是一种将源程序编译生成的固件烧录到目标芯片上的设备。按烧录方式可分为在板烧写和裸片烧写。在板烧写:也称为ICP烧写,是把芯片焊到PCB板上后再进行烧录;裸片烧写:也称为离线烧录,是把芯片放到夹具上进行烧录,之后再把芯片焊到PCB上。

PV040R1K1T1NFWS
PV040R1K1T1WFR1
PV040R1K1T1NKLC
PV040R9K1T1NFWS
PV040R1K1T1NFFC
PV040R1K1T1NF
PV040R1K1T1N100
PV040R1K1T1WMR1
PV040R1K1T1NFRZ
PV040R1K1T1WMRC
PV040R1K1T1NMMK
PV040R1K1T1NMMC
PV040R1K1T1VMMC
PV040R1K1T1NFHS
PV040R1K1T1NGLC
PV040R1K1T1NHLC
PV040R1K1T1WMMC
PV040L1L1T1NFWS
PV040R1K1T1NMLC
PV040R1D1T1NGCC
PV040R1K1T1NELA
PV040R9K1T1NMMCK0188
PV046R1K1T1N001
PV046R1K1T1N100
PV046R1K1T1NFDS
PV046R1K1T1NFR1
PV046R1K1T1NFHS
PV046R1K1T1NMMC
PV046R1K1T1NMM1
PV046R1K1T1NMRC
PV046R1K1T1NFWS
PV046R1K1T1NFRC
PV046R1K1T1NFF1
PV046R1D1T1NFWS
PV046R1D3T1NFFC
PV046R1K1A1NF
PV046L1K1A1NFHS
PV046R1K1B1NFDS
PV046R1D1T1NHCC
PV046R1K1T1NFFC
PV046R1K1T1NMFC
PV046R1K1T1NMF1
PV046R9K1T1NMMC

PV046R1K1AYNMRC
PV046R1K1JHNMMC
PV046R9K1T1NFWS
PV046R1K4T1NMR1
PV046R1K4T1NFHS
PV046L1K1T1NFWS
PV046R1K1S1NFWS
PV046R1K1T1WFDS
PV046R1K1T1NMRZ
PV046R1K1T1EMMC
PV046R1K1T1WMMC
PV046R1K1T1NFFP
PV046R1K1A4NFRC
PV046R1K1T1VFDS
PV046R1K8T1NFWS
PV046R1K1T1WMM1
PV046L1K1T1NMMC
PV046R1K8T1VMMC
PV046R1K8T1NMMC
PV046R1K1T1NF
PV046R1K1AYNMRZ
PV046R1K1T1NHLC
PV046R1K1T1NMMK
PV046R1K1T1NKLC
PV046R1K1T1NMR1
PV046R1K1T1NFRZ
PV046R1K1T1WFR1
PV046R1K4T1NFR1
PV046R1K1T1WMR1
PV046R1K1T1NMRK
PV046R1K1T1WMRC
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PV046R1K1T1VMMC
PV046R1K1T1NGLC
PV046R1L1T1NMMC
PV046R1K8T1N001
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PV046R1K1T1NMMCX5934
PV063R1K1T1NMF1
PV063R1K1T1NMMC
PV063R1K1T1NMMK
PV063R9L1TNMPCK0
PV063R1K1A1VFPR
PV063R1K1C1NFWS
PV063R2K1T1N001
PV063R9L1T1NFWS
PV063R1K1A1NFHS
PV063R1K1T1NFFP
PV063R1K1T1NFPR
PV063R1K1T1NGLC
PV063R1K1T1N001
PV063R1K1T1N100
PV063R1K1T1NFDS
滨松于今年正式发布了的近红外MPPC研制成果,推出了红外增强型MPPCS1372系列。其在95纳米处具有较高的探测效率,响应速度快,工作温度范围宽,适合各种场合下的激光雷达应用,尤其是使用ToF测距法的长距离测量。下图是滨松推出的红外增强型MPPC(硅光电倍增管)S1372系列。硅PIN光电二极管成本低,且不易受周围环境光的干扰,但相比APD/SPAD和MPPC,探测距离较短。硅PIN光电二极管的上升和下降时间非常短(通常为1纳秒或更短),因此非常适合于接收25纳秒数量级的光脉冲。