数字可调增益通过内部精密电阻阵列实现。为了优化增益、CMRR和失调，可以对这些电阻阵列进行片内调整，从而获得良好的整体直流性能。还可以运用设计技巧来实现紧凑的IC布局，使寄生效应，并提供*的匹配，产生良好的交流性能。由于这些优点，如果有符合设计要求的PGIA，强烈建议选择这样的器件。表1列出了可用的集成PGIA以及一些关键规格。PGIA的选择取决于应用。AD825x由于具有快速建立时间和高压摆率，在多路复用系统中非常有用。
PV063R1K1T1NFR1
PV063R1K1T1NFHS
PV063R1K1T1NMM1
PV063R1K1T1NMRC
PV063R1K1T1NFWS
PV063R1K1T1NFRC
PV063R1K1T1NFF1
PV080L1K1T1NFFC
PV080R1K1B1NSLB
PV080L1K1T1NFHS
PV080R1L1T1MULC
PV080R1K1A1NFWS
PV080R1K1T1NFRL
PV080R1K1T1NGLA
PV080R1K1T1NMMC
PV080R1L8L3NULC
PV080R1L8T1NULC
PV092R1K8T1N001
PV092R1K1T1NFRZ
PV092R1K1T1NMM1
PV092R1K1T1NMRK
PV092R1K4T1NFHS
PV092R1K1T1NKLC
PV092R1K1T1VMMC
PV092R1L1T1WTCC
PV092R1K1T1NF
PV092R1D1T1NMMC
PV092R1K1T1NGLC
PV092R1K1T1NMF1
PV092R1K1T1WFR1
PV092R1K1T1NULZ
PV092R1K1T1NHLC
PV092R1K1T1NFFC
PV092R1K1A1NFWS
PV092R1K1T1NFHS
PV092R1K1T1NFF1
PV092R1K1T1NFWS
PV092R9K1T1NMMC
PV092R1K1T1NFR1
PV092R9K1T1NFWS
PV092R1K1T1N001
PV092R1K1T1EMMC
PV092R1K1S1NFWS
PV092R1K4T1NMR1
PV092R1L1L3WTCC
PV092R1K1T1NUPM
PV092R1K8T1NMMC
PV092R1K1T1VFDS
PV092R1K1T1NMRC
PV092R1K1T1WMM1
PV092R1K1T1PFDS
PV092R1K1T1WMRC
PV092R1K1A1NMMC
PV092R1K1T1NMMC
PV092R1K8T1VMMC
PV092R1K1T1NMMK
PV092L1K1T1NFWS
PV092R1K1T1NFDS
PV092R1K1T1NKLA
PV092L1K1T1NMMC
PV092R1K4T1NFR1
PV092R1K1T1NMFC
PV092R1K1T1N100
PV092R1K8T1NFWS
PV092R1K1JHNMMC
PV092R1K4T1NMMC
PV092R1K1A4WFRZ
PV092R1K1AYNMRZ
PV092R1K1T1WFDS
PV092R1K1T1NFRC
PV092R1K1T1NHCC
PV092R1D1T1VMMC
PV092R1K1T1NMRZ
PV092R1K1T1WMR1
PV092R1K1T1WMMC
PV092R1K1T1NMR1
PV092R1L1T1NMMC
PV092R1K1T1NFFP
PV092L1K1T1N001
PV092R1D1T1NGLC
PV092R1K1T1NMLA
PV092R1K4T1NFPD
PV092R1L1T1NFPD
PV092L1K1J1NFR1
PV092R1K1A1NSLA
PV140R1K1T1NFRL
PV140L1K8T1NSLC
PV140R1K1T1NTCB
PV140R1L1A1NF
PV140L9G3B1NTCC
PV140R1K1T1NWLA
PV140R1K1T1NSCA
PV140R1D3T1VFHS
PV140L1G1T1NFFP
PV140L1K1T1NFFC
PV140L1K1T1NFFP
PV140L1K1T1NFWS
PV140L1L1T1NWCC
PV140R1D1T1NFFC
PV140R1F1T1NFHS
PV140R1F1T1NYCC
PV140R1F3T1NFFC
PV140R1F3T1NFRP
PV140R1G1T1VFFC
PV140R1K1A1NSCC
PV140R1K1B1NFWS
PV140R1K1B1NUPG
PV140R1K1T1NFDS
PV140R1K1T1NFFC
PV140R1K1T1NFFD
PV140R1K1T1NFFP
PV140R1K1T1NFF1
PV140R1K1T1NFHS
PV140R1K1T1NF
PV140R1K1T1NFRC
PV140R1K1T1NFRD
PV140R1L1T1NUPG
PV140R1L1T1NWCC
PV140R1L4T1NUPG
PV140R1K1T1NMMC
PV140R1K1T1NMRK
PV140R1K1T1NMRZ
PV140R1K1T1NULC
PV140R1K1T1NWCC
PV140R1K1T1NWLC
PV140R1K1T1WMMC
PV140R1L1T1NMMC
PV140R9K1T1NUPZ
PV140R9L1LKNWCC
PV140R9K1A1NSLCK0173
PV140R9K1T1NFDSK0186
PV140R9K1T1NFFCK0011
PV140R9K1T1NFHSK0017
PV140R9K1T1NFRCK0107
PV140R9K1T1NFWSK0032
PV140R9K1T1NFWSK0155
PV140R9K1T1NKCCK0175
PV140R9K1T1NMLCK0081
PV140R9K1T1NSLCK0003
PV140R9K1T1WSCCK0072
PV140R9K4T1NFFPK0088
PV140R9K4T1NZCBK0154
PV140R9K4T1WFRPX5918
PV140L9G1T1NFFPK0083
网络(的电缆及元器件)能够显著减小进入到周围环境中而可能被拦截的电磁能辐射等级。不同干扰场的选择干扰场主要有电磁干扰及射频干扰两种。电磁干扰(EMI)主要是低频干扰，马达、荧光灯以及电源线是通常的电磁干扰源。射频干扰(RFI)是指无线频率干扰，主要是高频干扰。无线电、电视转播、雷达及其他无线通讯是通常的射频干扰源。对于抵抗电磁干扰，选择编织*为有效，因其具有较低的临界电阻;对于射频干扰，箔层*有效，因编织依赖于波长的变化，它所产生的缝隙使得高频信号可自由进出导体;而对于高低频混合的干扰场，则要采用具有宽带覆盖功能的箔层加编织网的组合方式。
