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A10VSO71DG/31R-PPA12N00
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A10VSO100DR/31R-PPA12K01
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A10VSO100DFE1/31R-PPA12K02
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A10VSO140DR/31R-PPB12N00
A10VSO140DR/31R-PPB12K01
A10VSO140DFR1/31R-PPB12N00
A10VSO140DFR1/31R-PPB12N00
A10VSO140DFR1/31R-PPB12K01
A10VSO140DFR/31R-PPB12N00
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A10VSO140DRG/31R-PPB12N00
A10VSO140DFE1/31R-PPB12N00
A10VSO140DFE1/31R-PPB12N002
A10VSO140FHD/31R-PPB12N00
A10VSO140ED/31R-PPB12N00
LED芯片技术发展的关键在于基底材料和外延生长技术。基底材料由传统的蓝宝石材料、硅和碳化硅，发展到氧化锌、氮化镓等新材料。在短短数年内，借助于包括芯片结构、表面粗化处理和多量子阱结构设计在内的一系列技术改进，LED在光效方面实现了巨大突破。硅基底成本很低，技术在不断进步中，但目前发光效率还不满意，如果保持这种发展速度，一旦达到较高水平，则硅基底成为*主要的技术方案成为必然的选择，企业也将获得巨大的经济回报。
