LED日光灯电源发热到一定程度会导致烧坏，关于这个问题，也见到过有人在行业论坛发过贴讨论过。本文将从芯片发热、功率管发热、工作频率降频、电感或者变压器的选择、LED电流大小等方面讨论LED日光灯电源发热烧坏MOS管技术。芯片发热本次内容主要针对内置电源调制器的高压驱动芯片。假如芯片消耗的电流为2mA，300V的电压加在芯片上面，芯片的功耗为0.6W，当然会引起芯片的发热。驱动芯片的电流来自于驱动功率MOS管的消耗，简单的计算公式为I=cvf（考虑充电的电阻效益，实际I=2cvf，其中c为功率MOS管的cgs电容，v为功率管导通时的gate电压，所以为了降低芯片的功耗，必须想办法降低v和f.如果v和f不能改变，那么请想办法将芯片的功耗分到芯片外的器件，注意不要引入额外的功耗。
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但是在光伏电站里，太阳能光伏电池组件，局部的阴影、不同的倾斜角度及面向方位、污垢、不同的老化程度、细小的裂缝以及不同光电板的不同温度等容易造成系统失配导致输出效率下降的弊端，进而导致整体的输出功率大幅降低，因此这也成为集中式逆变器难以解决的问题。为了解决这一问题，近年来出现即“微逆变器”及“微型转换器”新架构。既在每个太阳能电池模块配备微型逆变电源，通过对各模块的输出功率进行优化，使得整体的输出功率化。
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PV040R1K1T1NFRZ
PV040R1K1T1WMRC
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PV040R1K1T1NMMC
PV040R1K1T1VMMC
PV040R1K1T1NFHS
PV040R1K1T1NGLC
PV040R1K1T1NHLC
PV040R1K1T1WMMC
PV040L1L1T1NFWS
PV040R1K1T1NMLC
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PV040R1K1T1NELA
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PV046R1K1T1N001
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PV046R1K1T1NFRC
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PV046R1D3T1NFFC
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PV046L1K1A1NFHS
PV046R1K1B1NFDS
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PV046R1K1T1NFFC
PV046R1K1T1NMFC
PV046R1K1T1NMF1
PV046R9K1T1NMMC
PV046R1K1AYNMRC
PV046R1K1JHNMMC
PV046R9K1T1NFWS
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PV046R1K4T1NFHS
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PV046R1K1S1NFWS
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PV046R1K1T1EMMC
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PV046R1K1A4NFRC
PV046R1K1T1VFDS
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PV046R1K8T1NMMC
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PV046R1K1T1VMMC
PV046R1K1T1NGLC
PV046R1L1T1NMMC
PV046R1K8T1N001
PV046R1K4T1NMMC
PV046R1K1T1NMMCX5934
PV063R1K1T1NMF1
PV063R1K1T1NMMC
PV063R1K1T1NMMK
PV063R9L1TNMPCK0
PV063R1K1A1VFPR
PV063R1K1C1NFWS
PV063R2K1T1N001
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但实际情况却相差很远，并不是电容越大对高速电路越有利，反而小电容才能被应用于高频。滤波电容用在电源整流电路中，用来滤除交流成分，使输出的直流更平滑。去耦电容用在放大电路中不需要交流的地方，用来消除自激，使放大器稳定工作。旁路电容用在有电阻连接时，接在电阻两端使交流信号顺利通过。关于去耦电容蓄能作用的理解去耦电容主要是去除高频如RF信号的干扰，干扰的进入方式是通过电磁辐射。而实际上，芯片附近的电容还有蓄能的作用，这是第二位的。
