θjA是相对于环境温度的结点热阻抗,基于印刷电路板(摄氏度/W)的封装,通常是在150℃的典型结温(有些部件的结温可能较低,需在数据表上确认)条件下计算出来的。所需θjA应为如下方程式:≤(结温-工作温度)/Pd(等式2)。滤掉封装中的器件,这样θjA比满足此初始结温要求的上述计算结果要低。在结温时操作会影响其可靠性。视电路板、气流、环境和附近的其他热源而定,留一定的余量始终是一个很好的设计实践。

PV032R1K1T1NGLC
PV032R1K4T1NFHS
PV032R1K8S1NFWS
PV032R1K8T1NMMC
PV032R1K1T1WFDS
PV032R1K1AYNMTP
PV032R1K1T1NHCC
PV032R1K1T1WMM1
PV032R1K1AYNMRZ
PV032R1K8T1NFWS
PV032R1K1A4NFTZ
PV032R1K1T1VMMC
PV032R1K1T1NFPV
PV032R1K1A1VFDS
PV032L1E3C1NFWS
PV032R1K1T1NELB
PV032L1K1T1NFWS
PV032R1K1B1NFDS
PV032RAK1T1NF
PV032R1L1B1NFWS
PV032R1K1T1NFPG
PV032R1K1S1NFWS
PV032L1K1T1NMMC
PV032R1K1T1NMRZ
PV032R1K1T1VFDS
PV032R1K1T1N10045
PV032R1K1AYNMT1
PV032R1K8T1N001
PV032R1K1T1NHLC
PV032R1K4T1NFR1
PV032R9K1T1NMMC
PV032R1K1A4VFRZ

PV032R1K1T1NFRZ
PV032R1K1T1NMMK
PV032R1L1T1NMMC
PV032R1K4T1NMR1
PV032R1K1T1WMR1
PV032R9K1T1NMMCK
PV032R1K1T1NE1B
PV032R1K1T1NKLC
PV040R1K8T1NMMC
PV040L1K1T1NFWS
PV040R1K1T1NFRC
PV040R1K1T1NFFP
PV040R1K4T1NMR1
PV040R1K1T1NMR1
PV040R1K1T1NFR1
PV040R1K4T1NMMC
PV040R1K1T1NFDS
PV040R1K1T1NFF1
PV040R1K1T1NMRZ
PV040R1K1AYNMRZ
PV040R1K4T1NFHS
PV040R1K1T1WFDS
PV040R1K8T1VMMC
PV040R1K8T1N001
PV040R9K1T1NMMC
PV040R1K4T1NFR1
PV040R1K1T1N001
PV040R1K8T1NFWS
PV040R1K1T1VFDS
PV040R1K1A4NFRZ
PV040R1K1T1NMRC
PV040R1K1T1NMM1
PV040R1K1T1WMM1
PV040R1K1T1NMRK
PV040R1K1T1NHCC
PV040R1K1T1NMF1
PV040R1K1JHNMMC
PV040L1K1T1NMMC
PV040R1K1S1NFWS
PV040R1L1T1NMMC
PV040R1D8T1N001
PV040R1K1T1NMFC
IT64系列双极性电源针对行业测试的需求,IT64系列电源因其的电流双极性设计,以及-1Ω可变的输出阻抗,不仅适用于对各类便携式电池进行充、放电测试,还可以模拟电池的充放电特性,协助进行其他各项测试。一台仪器实现多种用途,极大地精简了测试设备,并优化了测试流程。以下重点介绍下我司IT64的Simulator功能在实际使用环境中的应用。IT64双极性电源系列Simulator功能界面图Soc表示电池容量百分比,Voc表示电池开路电压,Q表示电池容量,Vt表示电池端电压,Res表示电池内阻,I表示电池充/放电电流。

PV040R1K1T1NFWS
PV040R1K1T1WFR1
PV040R1K1T1NKLC
PV040R9K1T1NFWS
PV040R1K1T1NFFC
PV040R1K1T1NF
PV040R1K1T1N100
PV040R1K1T1WMR1
PV040R1K1T1NFRZ
PV040R1K1T1WMRC
PV040R1K1T1NMMK
PV040R1K1T1NMMC
PV040R1K1T1VMMC
PV040R1K1T1NFHS
PV040R1K1T1NGLC
PV040R1K1T1NHLC
PV040R1K1T1WMMC
PV040L1L1T1NFWS
PV040R1K1T1NMLC
PV040R1D1T1NGCC
PV040R1K1T1NELA
PV040R9K1T1NMMCK0188
PV046R1K1T1N001
PV046R1K1T1N100
PV046R1K1T1NFDS
PV046R1K1T1NFR1
PV046R1K1T1NFHS
PV046R1K1T1NMMC
PV046R1K1T1NMM1
PV046R1K1T1NMRC
PV046R1K1T1NFWS
PV046R1K1T1NFRC
PV046R1K1T1NFF1
PV046R1D1T1NFWS
PV046R1D3T1NFFC
PV046R1K1A1NF
PV046L1K1A1NFHS
PV046R1K1B1NFDS
PV046R1D1T1NHCC
PV046R1K1T1NFFC
PV046R1K1T1NMFC
PV046R1K1T1NMF1
PV046R9K1T1NMMC

PV046R1K1AYNMRC
PV046R1K1JHNMMC
PV046R9K1T1NFWS
PV046R1K4T1NMR1
PV046R1K4T1NFHS
PV046L1K1T1NFWS
PV046R1K1S1NFWS
PV046R1K1T1WFDS
PV046R1K1T1NMRZ
PV046R1K1T1EMMC
PV046R1K1T1WMMC
PV046R1K1T1NFFP
PV046R1K1A4NFRC
PV046R1K1T1VFDS
PV046R1K8T1NFWS
PV046R1K1T1WMM1
PV046L1K1T1NMMC
PV046R1K8T1VMMC
PV046R1K8T1NMMC
PV046R1K1T1NF
PV046R1K1AYNMRZ
PV046R1K1T1NHLC
PV046R1K1T1NMMK
PV046R1K1T1NKLC
PV046R1K1T1NMR1
PV046R1K1T1NFRZ
PV046R1K1T1WFR1
PV046R1K4T1NFR1
PV046R1K1T1WMR1
PV046R1K1T1NMRK
PV046R1K1T1WMRC
PV046R1K1T1NHCC
PV046R1K1T1VMMC
PV046R1K1T1NGLC
PV046R1L1T1NMMC
PV046R1K8T1N001
PV046R1K4T1NMMC

PV046R1K1T1NMMCX5934
PV063R1K1T1NMF1
PV063R1K1T1NMMC
PV063R1K1T1NMMK
PV063R9L1TNMPCK0
PV063R1K1A1VFPR
PV063R1K1C1NFWS
PV063R2K1T1N001
PV063R9L1T1NFWS
PV063R1K1A1NFHS
PV063R1K1T1NFFP
PV063R1K1T1NFPR
PV063R1K1T1NGLC
PV063R1K1T1N001
PV063R1K1T1N100
PV063R1K1T1NFDS
为得到对比度和成像清晰度,需要用到几种光源,检查时由程序来选择光源、颜色组合和光强,以达到视觉效果。为了确保识别的正确性,元件的高度必须小于8mm(从PCB板表面到元件顶端)。由于矢量成像技术用到的是几何信息,所以元件是否旋转、得到的图形与参考模型大小是否一致都没有影响,而且也和产品颜色、光照和背景等的变化无关。矢量成像检查分三部进行:矢量成像系统在元件影像图上找出主要特征并将其分离出来,然后对这些显著特征进行测量,包括形状、尺寸、角度、弧度和明暗度等;检查合成图象和被测元件图像主要特征的空间关系;*,不论元件旋转角度、大小或相对其背景的体外观如何,它在线路板上的x、y和θ值都可通过计算确定下来。