滤波器的储存属性造成了振铃现象，即信号中增加了多余周期。群延时显示了提升滤波器占据的时长。低频凸起具有很长的振铃，这不足为奇。群延时与滤波器频率成反比（与波长成正比），相位偏移相等时，频率越低，群延时越长。为方便演示，我们以所示的信号处理链路为例。我们输入一个测试信号，看看将发生什么。为2通道示波器显示的结果。蓝色轨迹为1000Hz6.5周期的小波。这是DonKeele测试信号中的一个。红色轨迹为此信号通过一个1000Hz提升滤波器之后的结果。
PV032R1K1T1NGLC
PV032R1K4T1NFHS
PV032R1K8S1NFWS
PV032R1K8T1NMMC
PV032R1K1T1WFDS
PV032R1K1AYNMTP
PV032R1K1T1NHCC
PV032R1K1T1WMM1
PV032R1K1AYNMRZ
PV032R1K8T1NFWS
PV032R1K1A4NFTZ
PV032R1K1T1VMMC
PV032R1K1T1NFPV
PV032R1K1A1VFDS
PV032L1E3C1NFWS
PV032R1K1T1NELB
PV032L1K1T1NFWS
PV032R1K1B1NFDS
PV032RAK1T1NF
PV032R1L1B1NFWS
PV032R1K1T1NFPG
PV032R1K1S1NFWS
PV032L1K1T1NMMC
PV032R1K1T1NMRZ
PV032R1K1T1VFDS
PV032R1K1T1N10045
PV032R1K1AYNMT1
PV032R1K8T1N001
PV032R1K1T1NHLC
PV032R1K4T1NFR1
PV032R9K1T1NMMC
PV032R1K1A4VFRZ
PV032R1K1T1NFRZ
PV032R1K1T1NMMK
PV032R1L1T1NMMC
PV032R1K4T1NMR1
PV032R1K1T1WMR1
PV032R9K1T1NMMCK
PV032R1K1T1NE1B
PV032R1K1T1NKLC
PV040R1K8T1NMMC
PV040L1K1T1NFWS
PV040R1K1T1NFRC
PV040R1K1T1NFFP
PV040R1K4T1NMR1
PV040R1K1T1NMR1
PV040R1K1T1NFR1
PV040R1K4T1NMMC
PV040R1K1T1NFDS
PV040R1K1T1NFF1
PV040R1K1T1NMRZ
PV040R1K1AYNMRZ
PV040R1K4T1NFHS
PV040R1K1T1WFDS
PV040R1K8T1VMMC
PV040R1K8T1N001
PV040R9K1T1NMMC
PV040R1K4T1NFR1
PV040R1K1T1N001
PV040R1K8T1NFWS
PV040R1K1T1VFDS
PV040R1K1A4NFRZ
PV040R1K1T1NMRC
PV040R1K1T1NMM1
PV040R1K1T1WMM1
PV040R1K1T1NMRK
PV040R1K1T1NHCC
PV040R1K1T1NMF1
PV040R1K1JHNMMC
PV040L1K1T1NMMC
PV040R1K1S1NFWS
PV040R1L1T1NMMC
PV040R1D8T1N001
PV040R1K1T1NMFC
根据上图显示，固晶层缺陷会造成的热阻增大，影响散热性能，具体的影响程度与缺陷的大小有关。测量结壳热阻：这两次测试的分别：次测量，器件直接接触到基板热沉上；第二次测量，器件和基板热沉中间夹着导热双面胶。由于两次散热路径的改变仅仅发生在器件封装壳之外，因此结构函数上两次测量的分界处就代表了器件的壳。如下图所示的曲线变化，可得出器件的热阻。结构无损检测：同批次产品，取固晶层完好、边缘缺陷以及中间缺陷的样品测试。
PV040R1K1T1NFWS
PV040R1K1T1WFR1
PV040R1K1T1NKLC
PV040R9K1T1NFWS
PV040R1K1T1NFFC
PV040R1K1T1NF
PV040R1K1T1N100
PV040R1K1T1WMR1
PV040R1K1T1NFRZ
PV040R1K1T1WMRC
PV040R1K1T1NMMK
PV040R1K1T1NMMC
PV040R1K1T1VMMC
PV040R1K1T1NFHS
PV040R1K1T1NGLC
PV040R1K1T1NHLC
PV040R1K1T1WMMC
PV040L1L1T1NFWS
PV040R1K1T1NMLC
PV040R1D1T1NGCC
PV040R1K1T1NELA
PV040R9K1T1NMMCK0188
PV046R1K1T1N001
PV046R1K1T1N100
PV046R1K1T1NFDS
PV046R1K1T1NFR1
PV046R1K1T1NFHS
PV046R1K1T1NMMC
PV046R1K1T1NMM1
PV046R1K1T1NMRC
PV046R1K1T1NFWS
PV046R1K1T1NFRC
PV046R1K1T1NFF1
PV046R1D1T1NFWS
PV046R1D3T1NFFC
PV046R1K1A1NF
PV046L1K1A1NFHS
PV046R1K1B1NFDS
PV046R1D1T1NHCC
PV046R1K1T1NFFC
PV046R1K1T1NMFC
PV046R1K1T1NMF1
PV046R9K1T1NMMC
PV046R1K1AYNMRC
PV046R1K1JHNMMC
PV046R9K1T1NFWS
PV046R1K4T1NMR1
PV046R1K4T1NFHS
PV046L1K1T1NFWS
PV046R1K1S1NFWS
PV046R1K1T1WFDS
PV046R1K1T1NMRZ
PV046R1K1T1EMMC
PV046R1K1T1WMMC
PV046R1K1T1NFFP
PV046R1K1A4NFRC
PV046R1K1T1VFDS
PV046R1K8T1NFWS
PV046R1K1T1WMM1
PV046L1K1T1NMMC
PV046R1K8T1VMMC
PV046R1K8T1NMMC
PV046R1K1T1NF
PV046R1K1AYNMRZ
PV046R1K1T1NHLC
PV046R1K1T1NMMK
PV046R1K1T1NKLC
PV046R1K1T1NMR1
PV046R1K1T1NFRZ
PV046R1K1T1WFR1
PV046R1K4T1NFR1
PV046R1K1T1WMR1
PV046R1K1T1NMRK
PV046R1K1T1WMRC
PV046R1K1T1NHCC
PV046R1K1T1VMMC
PV046R1K1T1NGLC
PV046R1L1T1NMMC
PV046R1K8T1N001
PV046R1K4T1NMMC
PV046R1K1T1NMMCX5934
PV063R1K1T1NMF1
PV063R1K1T1NMMC
PV063R1K1T1NMMK
PV063R9L1TNMPCK0
PV063R1K1A1VFPR
PV063R1K1C1NFWS
PV063R2K1T1N001
PV063R9L1T1NFWS
PV063R1K1A1NFHS
PV063R1K1T1NFFP
PV063R1K1T1NFPR
PV063R1K1T1NGLC
PV063R1K1T1N001
PV063R1K1T1N100
PV063R1K1T1NFDS
声级计（SoundLevelMeter，简称SLM）的主要成本是测量级麦克风，如.5英寸反应耦合等离子体（InductivelyCoupledPlasma，简称ICP）麦克风。高昂的麦克风成本限制了声级计在如建筑工地监测或环境研究等诸多仪器中的应用。微机电系统（Micro-Electro-MechanicalSystem，简称MEMS）麦克风成为了传统ICP麦克风的高性能替代产品，成本至少降低两个数量级。
