对比试块应每5年一次。超声波探伤稳定性的实现，探伤方法探伤方法是保证探伤结果准确的前提。因此应根据工件的形状、缺陷特点、材料性质及探伤要求，准确无误地进行探伤。耦合剂的影响耦合是实现声能传递的必由途径，耦合剂是声源与工件这两种固体之间实现声能传递、保证软接触所必需的传声介质，它在二者界面上具有排除空气，填充不平的凹坑和间隙，并兼有防磨损，方便移动的功能。耦合损耗与耦合层厚度d及耦合层中超声波波长λ有关。
PV023R1K1T1NHCC
PV023R1K1T1VMMC
PV023R1K1T1WMRC
PV023R9K1T1NFWS
PV023R1K1JHNMMC
PV023R1K4T1NFHS
PV023R1L1T1NMMC
PV023R1K8T1VMMC
PV023R1K1T1NFRZ
PV023R9K1T1NMMC
PV023R1K4T1NMR1
PV023R1K1T1VFDS
PV023R1K8T1NMMC
PV023R1K8T1NFWS
PV023R1K1T1WMR1
PV023R1K8T1N001
PV023L1K1T1NMMC
PV023R1K4T1NMMC
PV023R1K1T1NKLC
PV023R1K4T1NFR1
PV023R1K1S1NFWS
PV023R1K1T1NFFC
PV023L1K1T1NFWS
PV023R1K1T1WFDS
PV023R1K1T1NFFP
PV023R1L1T1NF
PV023R1K1T1WMM1
PV023R1K1T1NHLC
PV023R1K1T1NMRZ
PV023R1K1T1NMRK
PV023R1K1T1WMMC
PV023R1K1T1NFF1
PV028R1K1T1N001
PV028R1K1T1N100
PV028R1K1T1NFDS
PV028R1K1T1NFR1
PV028R1K1T1NFHS
PV028R1K1T1NMMC
PV028R1K1T1NMM1
PV028R1K1T1NMRC
PV028R1K1T1NFWS
PV028R1K1T1NFRC
PV028R1K1T1NFF1
PV028R1K1T1WMM1
PV028R1K1T1WFR1
PV028R1K8T1NFWS
PV028R1K4T1NFR1
PV028R1K1T1VMMC
PV028R1K1T1NHCC
PV028R1K4T1NMMC
PV028R1K1T1NELC
PV028R1K1T1NHLC
PV028R1K8T1N001
PV028R1K1T1NF
PV028R9K1T1NFWS
PV028R9K1T1NMMC
PV028R1K1T1VFDS
PV028R1K1AYNMRZ
PV028R1K8T1NMMC
PV028R1K1T1NMRK
PV028R1K1T1NFFP
PV028L1K1T1NMMC
PV028R1K1T1NFRZ
PV028R1K1S1NFWS
PV028R1K1T1NMMZ
PV028R1K1T1NMR1
PV028R1K1T1NMFC
PV028R1K1T1WFDS
PV028L1K1T1NFWS
PV028R1K1JHNMMC
PV028R1K1T1NMRZ
PV028R1K4T1NFHS
PV028R1K1T1NMF1
PV028R1K1T1NGLC
PV028R1K1T1WMRC
PV028R1L1T1NMMC
PV028R1K1T1WMMC
PV028R1K1T1WMR1
PV028R1K8T1VMMC
PV028R1K1T1NFFC
PV028R1K1T1NMMK
PV028R1K4T1NMR1
PV032R1K1T1N001
PV032R1K1T1N100
PV032R1K1T1NFDS
PV032R1K1T1NFR1
PV032R1K1T1NFHS
PV032R1K1T1NMMC
PV032R1K1T1NMM1
PV032R1K1T1NMRC
PV032R1K1T1NFWS
PV032R1K1T1NFRC
PV032R1K1T1NFF1
PV032R1K1AYNMTZ
PV032R1K1T1NMFC
PV032R1K1T1NMR1
PV032R1K1T1NMF1
PV032R1K1T1NMRK
PV032R1K1T1NFFP
PV032R1K1T1WMMC
PV032R1K4T1NMMC
PV032R1K8T1VMMC
PV032R1K1T1WFR1
PV032R1K1T1NFFC
PV032R1K1JHNMMC
PV032R1K1T1WMRC
PV032R9K1T1NFWS
泰克科技公司日前宣布，为Keithley4200A-SCS参数分析仪推出两款源测量单元(SMU)模块，即使在由于长电缆和复杂的测试设置而产生高负载电容时，其仍能执行低电流测量。许多主要测试应用都面临着这一挑战，如LCD显示器制造和卡盘上的纳米FET器件测试。在被测器件本身电容很小的情况下，许多低电流测量应用中所需要的测试设置也会增加SMU输出端的电容。当测试连接电容太大时，*终的低电流测量结果可能会变得不稳定。
