电子元器件的降额等级可以参考《*标准——元器件降额准则GJB/Z35-93》，一般可分成三个降额等级：Ⅰ级降额：I级降额是的降额，适用于设备故障将会危及安全，导致任务失败和造成严重经济损失的情况。Ⅱ级降额：工作应力减小对元器件可靠性增长有明显效益，适用于设备故障会使工作任务降级，或需支付不合理的维修费用。Ⅲ级降额：Ⅲ级降额是的降额，相对来说元器件成本也较低。适用于设备故障对工作任务的完成只有小的影响，或可迅速、经济地加以修复。
PV023R1K1T1NHCC
PV023R1K1T1VMMC
PV023R1K1T1WMRC
PV023R9K1T1NFWS
PV023R1K1JHNMMC
PV023R1K4T1NFHS
PV023R1L1T1NMMC
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PV023R1K1T1NFRZ
PV023R9K1T1NMMC
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PV023R1K8T1NMMC
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PV023R1K4T1NMMC
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PV023R1K1S1NFWS
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PV023R1L1T1NF
PV023R1K1T1WMM1
PV023R1K1T1NHLC
PV023R1K1T1NMRZ
PV023R1K1T1NMRK
PV023R1K1T1WMMC
PV023R1K1T1NFF1
PV028R1K1T1N001
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PV028R1K1T1NFF1
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PV028R1K1T1WFR1
PV028R1K8T1NFWS
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PV028R9K1T1NFWS
PV028R9K1T1NMMC
PV028R1K1T1VFDS
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PV028R1K8T1NMMC
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PV028R1K1T1NFFP
PV028L1K1T1NMMC
PV028R1K1T1NFRZ
PV028R1K1S1NFWS
PV028R1K1T1NMMZ
PV028R1K1T1NMR1
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PV028R1K1T1WFDS
PV028L1K1T1NFWS
PV028R1K1JHNMMC
PV028R1K1T1NMRZ
PV028R1K4T1NFHS
PV028R1K1T1NMF1
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PV028R1K1T1WMRC
PV028R1L1T1NMMC
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PV028R1K1T1WMR1
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PV028R1K1T1NFFC
PV028R1K1T1NMMK
PV028R1K4T1NMR1
PV032R1K1T1N001
PV032R1K1T1N100
PV032R1K1T1NFDS
PV032R1K1T1NFR1
PV032R1K1T1NFHS
PV032R1K1T1NMMC
PV032R1K1T1NMM1
PV032R1K1T1NMRC
PV032R1K1T1NFWS
PV032R1K1T1NFRC
PV032R1K1T1NFF1
PV032R1K1AYNMTZ
PV032R1K1T1NMFC
PV032R1K1T1NMR1
PV032R1K1T1NMF1
PV032R1K1T1NMRK
PV032R1K1T1NFFP
PV032R1K1T1WMMC
PV032R1K4T1NMMC
PV032R1K8T1VMMC
PV032R1K1T1WFR1
PV032R1K1T1NFFC
PV032R1K1JHNMMC
PV032R1K1T1WMRC
PV032R9K1T1NFWS
实际值将与两个线圈之间的距离成反比，且如果初级和次级未对准，则实际值也将减小。然而，通过在初级和次级引入磁共振可改善这种情况。通过使用两个调谐电路，功率以特定的频率传输，且与非谐振方法相比，功率传输的能效可近乎翻倍。:采用谐振方法的无线功率传输这种方法的另一优点是具有更好的电磁干扰(EMI)性能，这对无线充电的大规模推广至关重要。它还允许使用诸如零电压开关(ZVS)或零电流开关(ZCS)等技术，这两种技术对于实现极高能效的功率传输都起着重要作用。
