功率器件热阻分布示意图举个例子来说，大家常用的S8050在25℃（Tc）的耗散功率是0.625W，额定电流为0.5A，结点温度为150℃,此代入公式有：从上面公式可以推算出Rja为200℃/W（Rja表示结点到空气的热阻）。假设芯片壳温（Tc）为55℃，热耗散功率有0.5W时，此刻芯片结点温度为：Tj=Tc+PD*Rjc代入得到155℃，已经过了结温150℃了。故需要降额使用，然而降额曲线在数据手册中并未标注，所以小编只能自行计算。
PV063R1K1T1NFR1
PV063R1K1T1NFHS
PV063R1K1T1NMM1
PV063R1K1T1NMRC
PV063R1K1T1NFWS
PV063R1K1T1NFRC
PV063R1K1T1NFF1
PV080L1K1T1NFFC
PV080R1K1B1NSLB
PV080L1K1T1NFHS
PV080R1L1T1MULC
PV080R1K1A1NFWS
PV080R1K1T1NFRL
PV080R1K1T1NGLA
PV080R1K1T1NMMC
PV080R1L8L3NULC
PV080R1L8T1NULC
PV092R1K8T1N001
PV092R1K1T1NFRZ
PV092R1K1T1NMM1
PV092R1K1T1NMRK
PV092R1K4T1NFHS
PV092R1K1T1NKLC
PV092R1K1T1VMMC
PV092R1L1T1WTCC
PV092R1K1T1NF
PV092R1D1T1NMMC
PV092R1K1T1NGLC
PV092R1K1T1NMF1
PV092R1K1T1WFR1
PV092R1K1T1NULZ
PV092R1K1T1NHLC
PV092R1K1T1NFFC
PV092R1K1A1NFWS
PV092R1K1T1NFHS
PV092R1K1T1NFF1
PV092R1K1T1NFWS
PV092R9K1T1NMMC
PV092R1K1T1NFR1
PV092R9K1T1NFWS
PV092R1K1T1N001
PV092R1K1T1EMMC
PV092R1K1S1NFWS
PV092R1K4T1NMR1
PV092R1L1L3WTCC
PV092R1K1T1NUPM
PV092R1K8T1NMMC
PV092R1K1T1VFDS
PV092R1K1T1NMRC
PV092R1K1T1WMM1
PV092R1K1T1PFDS
PV092R1K1T1WMRC
PV092R1K1A1NMMC
PV092R1K1T1NMMC
PV092R1K8T1VMMC
PV092R1K1T1NMMK
PV092L1K1T1NFWS
PV092R1K1T1NFDS
PV092R1K1T1NKLA
PV092L1K1T1NMMC
PV092R1K4T1NFR1
PV092R1K1T1NMFC
PV092R1K1T1N100
PV092R1K8T1NFWS
PV092R1K1JHNMMC
PV092R1K4T1NMMC
PV092R1K1A4WFRZ
PV092R1K1AYNMRZ
PV092R1K1T1WFDS
PV092R1K1T1NFRC
PV092R1K1T1NHCC
PV092R1D1T1VMMC
PV092R1K1T1NMRZ
PV092R1K1T1WMR1
PV092R1K1T1WMMC
PV092R1K1T1NMR1
PV092R1L1T1NMMC
PV092R1K1T1NFFP
PV092L1K1T1N001
PV092R1D1T1NGLC
PV092R1K1T1NMLA
PV092R1K4T1NFPD
PV092R1L1T1NFPD
PV092L1K1J1NFR1
PV092R1K1A1NSLA
PV140R1K1T1NFRL
PV140L1K8T1NSLC
PV140R1K1T1NTCB
PV140R1L1A1NF
PV140L9G3B1NTCC
PV140R1K1T1NWLA
PV140R1K1T1NSCA
PV140R1D3T1VFHS
PV140L1G1T1NFFP
PV140L1K1T1NFFC
PV140L1K1T1NFFP
PV140L1K1T1NFWS
PV140L1L1T1NWCC
PV140R1D1T1NFFC
PV140R1F1T1NFHS
PV140R1F1T1NYCC
PV140R1F3T1NFFC
PV140R1F3T1NFRP
PV140R1G1T1VFFC
PV140R1K1A1NSCC
PV140R1K1B1NFWS
PV140R1K1B1NUPG
PV140R1K1T1NFDS
PV140R1K1T1NFFC
PV140R1K1T1NFFD
PV140R1K1T1NFFP
PV140R1K1T1NFF1
PV140R1K1T1NFHS
PV140R1K1T1NF
PV140R1K1T1NFRC
PV140R1K1T1NFRD
PV140R1L1T1NUPG
PV140R1L1T1NWCC
PV140R1L4T1NUPG
PV140R1K1T1NMMC
PV140R1K1T1NMRK
PV140R1K1T1NMRZ
PV140R1K1T1NULC
PV140R1K1T1NWCC
PV140R1K1T1NWLC
PV140R1K1T1WMMC
PV140R1L1T1NMMC
PV140R9K1T1NUPZ
PV140R9L1LKNWCC
PV140R9K1A1NSLCK0173
PV140R9K1T1NFDSK0186
PV140R9K1T1NFFCK0011
PV140R9K1T1NFHSK0017
PV140R9K1T1NFRCK0107
PV140R9K1T1NFWSK0032
PV140R9K1T1NFWSK0155
PV140R9K1T1NKCCK0175
PV140R9K1T1NMLCK0081
PV140R9K1T1NSLCK0003
PV140R9K1T1WSCCK0072
PV140R9K4T1NFFPK0088
PV140R9K4T1NZCBK0154
PV140R9K4T1WFRPX5918
PV140L9G1T1NFFPK0083
本次测试中，中兴通讯实现将8路25G信号汇聚到一路200G波长中传送，满带宽下所有业务的前传端到端时延为5us，低于传统设备一个数量级，完全满足5G承载要求；后续还将引入灵活和轻量的FlexO+技术等创新技术，端到端时延有望降到1us。OTN具有大带宽、低时延、多业务透明传送、高精度同步、安全可靠、易维护等特点，很好的匹配了5G的需求，是未来5G承载的主流技术。在对时延极其敏感的5G前传网络中，采用OTN承载，可实现CPReCPRNGFEthernet等多路业务信号的点到点波长直达传输，中间节点光层穿通，所有业务的时延都是。
